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PPS1045 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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PPS1045 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() PPS1020 ... PPS1045 PPS1020 ... PPS1045 Surface Mount Schottky Rectifiers Schottky-Gleichrichter für die Oberflächenmontage Version 2013-02-26 Dimensions - Maße [mm] Nominal Current Nennstrom 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 30...45 V Plastic case Kunststoffgehäuse Power SMD Weight approx. Gewicht ca. 0.1 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Green Molding Standard Lieferform gegurtet auf Rolle Halogen-Free Features Vorteile Optimized trade-off between VF and IR Compatible to industry standard packages Optimaler Kompromiss zwischen VF und IR Kompatibel zu industrieüblichen Gehäusen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive / Surge peak reverse voltage Periodische- / Spitzen-Sperrspannung VRRM [V] / VRSM [V] Forward Voltage Durchlass-Spannung VF [V] Tj = 125°C Forward Voltage Durchlass-Spannung VF [V] 1) 2) IF = 5 A IF = 5 A IF = 10 A PPS1030 30 typ. 0.31 < 0.44 < 0.49 PPS1040 40 typ. 0.31 < 0.44 < 0.49 PPS1045 45 typ. 0.31 < 0.44 < 0.49 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 10 A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 50 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 250/275 A 2) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 310 A2s 2) Junction temperature – Sperrschichttemperatur ... in DC forward mode – bei Gleichstrom-Durchlassbetrieb Storage temperature – Lagerungstemperatur Tj Tj TS -50...+150°C ≤ 200 °C 3) -50...+150°C 1 Tj = 25°C 2 Both anode pins connected – Beide Anodenanschlüsse kontaktiert 3 For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes” Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes” © Diotec Semiconductor AG http://www.diotec.com/ 1 4.0±0.2 0.29 1.1±0.2 0.9 1.8±0.1 LYYWW 0.8 ±0.15 1.84 1.3±0.2 3.0 ±0.1 |
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