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MBRF5100 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBRF5100
Description  5.0AMPS Isolated Schottky Barrier Rectifiers
PDF  3 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF5100 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
Low power loss, high efficiency
High current capability, low forward voltage drop
Guard-ring for overvoltage protection
Mechanical Data
MBRF5100 ITO-220AC 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Symbol
Unit
VRRM
V
VRMS
V
VDC
V
IF(AV)
A
IRRM
A
dV/dt
V/us
Cj
pF
RθjC
OC/W
TJ
OC
TSTG
OC
Metal silicon rectifier, majority carrier conduction
Packing code
C0
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
260℃/10 seconds/.25", (6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Case: ITO-220AC molded plastic body
MBRF5100 - MBRF5200
5.0AMPS Isolated Schottky Barrier Rectifiers
ITO-220AC
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.61 grams
Parameter
MBRF
5100
MBRF
5150
MBRF
5200
Maximum Repetitive Peak Reverse Voltage
100
150
200
Maximum RMS Voltage
70
105
140
Maximum DC Blocking Voltage
100
150
200
Maximum Average Forward Rectified Current
5
Peak Repetitive Surge Current
(Rated VR, Square Wave, 20KHz)
IFRM
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
120
A
Peak Repetitive Reverse Surge Current (Note 1)
0.5
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, TA=25℃
IF=5A, TA=125℃
VF
V
0.90
1.02
0.80
0.92
Operating Temperature Range
- 65 to + 150
Maximum Reverse Current @ Rated VR TA=25 ℃
TA=125 ℃
IR
0.1
mA
5
Voltage Rate of Change,(Rated VR)
10000
Storage Temperature Range
- 65 to + 175
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Version:D12
C0G
Typical Junction capacitance
310
Typical Thermal Resistance
3
Ordering Information(example)
Part No.
Package
Packing
Packing code
(Green)


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