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ACE4441B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4441B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE4441B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE4441B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features V DS(V)=-60V I D=-4A (VGS=-10V) R DS(ON)＜75mΩ (VGS=-10V) R DS(ON)＜90mΩ (VGS=-4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current (Continuous) * AC TA=25 OC ID -4 A TA=70 OC -3.2 Drain Current (Pulse) * B IDM -20 Power Dissipation TA=25 OC PD 3 W TA=70 OC 2.1 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 Ordering information ACE4441B XX + H FM : SOP-8 Pb - free Halogen - free |
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