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ACE4826B Datasheet(PDF) 2 Page - ACE Technology Co., LTD.

Part # ACE4826B
Description  Dual N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE4826B Datasheet(HTML) 2 Page - ACE Technology Co., LTD.

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ACE4826B
Dual N-Channel Enhancement Mode MOSFET
VER 1.2
2
Ordering information
ACE4826B XX + H
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
60
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
uA
Zero Gate Voltage Drain
Current
IDSS
VDS=60V, VGS=0V
1
uA
On characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1
1.4
3
V
Drain-Source
On-Resistance
RDS(ON)
VGS=10V, ID=5.5A
30
41
m
Ω
VGS=4.5V, ID=4.5A
35
52
Drain-Source Diode Characteristics And Maximum Ratings
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.5
0.77
1
V
Switching characteristics
Turn-On Time
td(on)
VGS=10V, RL=5.4Ω, VDS=30V,
RGEN=3Ω, ID=5.5A
15
nS
tr
20
Turn-Off Time
td(off)
40
tf
15
Dynamic characteristics
Input Capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
1180
pF
Output Capacitance
Coss
170
REVERSE Transfer
Capacitance
Crss
100
FM : SOP-8
Pb - free
Halogen - free



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