Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Lower On-resistance

-30V

▼ Simple Drive Requirement

14mΩ

▼ Fast Switching Characteristic

-50A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-c

Maximum Thermal Resistance, Junction-case

2.3

℃

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

℃

/W

Data and specifications subject to change without notice

200808192

Parameter

Drain-Source Voltage

Gate-Source Voltage

-55 to 150

Linear Derating Factor

54

-55 to 150

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

-32

Pulsed Drain Current

1

180

1

AP4407GS/P

Rating

-30

+25

-50

0.4

RoHS-compliat Product

G

D

S

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

G D

S

TO-263(S)

G

D

S

TO-220(P)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP4407GP) are

available for low-profile applications.