AP9435GP datasheet(1/4 Pages) A-POWER

Part #	AP9435GP

Description	Low Gate Charge, Simple Drive Requirement

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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1 / 4 page

Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Low Gate Charge

BVDSS

-30V

▼ Simple Drive Requirement

RDS(ON)

50mΩ

▼ Fast Switching

ID

- 15A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID@TC=25℃

A

ID@TC=100℃

A

IDM

A

PD@TC=25℃

W

TSTG

℃

TJ

℃

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

10

℃

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

℃

/W

Data and specifications subject to change without notice

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

-55 to 150

Storage Temperature Range

Continuous Drain Current

-8

Pulsed Drain Current

1

-60

-55 to 150

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

AP9435GP

Rating

RoHS-compliant Product

200902252

1

- 30

+20

-15

12.5

G

D

S

G

D

S

TO-220(P)

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial

through-hole applications and suited for low voltage applications such

as DC/DC converters.

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AP9435GP Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

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