Schottky Barrier Diodes

2

ANODE

1

CATHODE

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,*

200

mW

Derate above 25°C

1.57

mW/°C

Thermal Resistance Junction to Ambient

R

θJA

635

°C/W

* FR-4 Minimum Pad

1

2

LBAT54HT1G

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low forward volt-

age reduces conduction loss. Miniature surface mount package is excellent for

hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

• Device Marking: JV

Characteristic

Symbol

Min

Typ

Max

Unit

µA)

30

—

—

Volts

——

10

pF

—0.5

2.0

µAdc

—

0.22

0.24

Vdc

—

0.24

0.26

Vdc

—

0.33

0.35

Vdc

—

0.16

0.18

Vdc

—

0.41

0.5

Vdc

—

0.52

1.0

Vdc

Reverse Recovery Time

——

5.0

ns

—

0.29

0.32

Vdc

—

0.35

0.40

Vdc

Forward Current (DC)

—

—

200

mAdc

Repetitive Peak Forward Current

—

—

300

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

—

—

600

mAdc

SOD-323

Device

Marking

Shipping

LBAT54HT31G

JV

3000/Tape & Reel

3

JV

10000/Tape & Reel

ORDERING INFORMATION

LESHAN RADIO COMPANY, LTD.

LBAT54HT 3 G

We declare that the material of product

compliance with RoHS requirements.

Junction Temperature

125Max

°C

Storage Temperature Range

–55 to +150

°C

Rev.A 1/3