AP4530GM datasheet(3/8 Pages) A-POWER

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AP4530GM

P-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-40

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-3A

mΩ

VGS=-4.5V, ID=-2A

100

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-4A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-40V, VGS=0V

-10

Drain-Source Leakage Current (Tj=70

oC)

VDS=-32V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=±20V

±100

Total Gate Charge

ID=-3A

Qgs

Gate-Source Charge

VDS=-30V

1.6

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

4.3

td(on)

Turn-on Delay Time

VDS=-20V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-10V

Fall Time

RD=20Ω

-7

Ciss

Input Capacitance

VGS=0V

605

970

Coss

Output Capacitance

VDS=-25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=-1.5A, VGS=0V

-1.3

trr

Reverse Recovery Time

IS=-3A, VGS=0V

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in

2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

AP4530GM Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

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