© 2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2SA733 Rev. A0

1

September 2009

2SA733

PNP General Purpose Amplifier

Features

• This device is designed for general purpose amplifier applications

at collector currents to 300 mA.

• Sourced from Process 68.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Symbol

Parameter

Value

Units

Collector-Base Voltage

-60

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5.0

V

Collector current

- Continuous

-500

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Parameter

Max

Units

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

°C/W

TO-92

1

1. Emitter 2. Collector 3.Base