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AM5829P Datasheet(PDF) 1 Page - Analog Power |
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AM5829P Datasheet(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() 1 AM5829P Analog Power PRELIMINARY Publication Order Number: DS-AM5829_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) rDS(on) (OHM) ID (A) 0.110 @VGS= -4.5V ±3.6 0.160 @VGS= -2.5V ±3.0 -20 MOSFETPRODUCTSUMMARY P-Channel 20-V (D-S) MOSFET With Schottky Diode •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe CF1206-8 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Typ Max t <=5sec 50 60 SteadyState 90 110 THERMALRESISTANCERATINGS MaximumJunction-to-Ambient aoC/W RthJA Parameter Vf (V) Diode ForwardVoltage 20 0.48V@1.0A 1.0 SCHOTTKYPRODUCTSUMMARY VKA (V) IF (A) Symbol Maximum Units VDS -20 VKA 20 VGS ±8 TA=25 oC±2.5 TA=70 oC±1.9 IDM ±10 IS -1.6 IF 0.5 IFM 8 TA=25 oC2.1 TA=70 oC1.1 TA=25 oC1.3 TA=70 oC0.68 TJ, Tstg -55 to 150 oC Average Forward Current (Schottky) MaximumPower Dissipation (MOSFET) a Pulsed Forward Current (Schottky) V ABSOLUTEMAXIMUMRATINGS(TA = 25 oCUNLESSOTHERWISENOTED) Parameter Pulsed Drain Current (MOSFET) b Gate-Source Voltage (MOSFET) Reverse Voltage (Schottky) Continuous Drain Current (TJ=150 oC) (MOSFET)a ID A Drain-Source Voltage (MOSFET) Continuous Source Current (MOSFETDiode Conduction) a MaximumPower Dissipation (Schottky) a Operating Junction and Storage Temperature Range PD W A A S G 1 2 3 4 CF1206-8 Top View K K D D 8 7 6 5 S D G P-Channel MOSFET K A |
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