AM4835EP datasheet(1/6 Pages) ANALOGPOWER

Part #	AM4835EP

Description	P-Channel 30-V (D-S) MOSFET

PDF	6 Pages

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Manufacturer	ANALOGPOWER [Analog Power]

Direct Link	http://www.analogpowerinc.com/index.html

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AM4835EP

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4835E_C

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

S

G

1

2

3

4

SOIC-8

Top View

D

8

7

6

5

S

D

G

P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

VDS (V)

rDS(on) m(Ω)ID (A)

19 @ VGS = -10V

-9.5

30 @ VGS = -4.5V

-7.5

PRODUCT SUMMARY

-30

Symbol Maximum Units

VDS

-30

VGS

±25

TA=25

oC-9.5

TA=70

oC-8.3

IDM

±50

IS

-2.1

A

TA=25

oC3.1

TA=70

oC2.6

TJ, Tstg -55 to 150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

RθJC

25

oC/W

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

50

oC/W

THERMAL RESISTANCE RATINGS

Parameter

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