Analog Power

AM12N65P

N-Channel 650-V (D-S) MOSFET

Symbol

Limit

Units

650

±20

Continuous Drain Current

a

12

50

40

A

Power Dissipation

300

W

-55 to 175

°C

Symbol

Maximum

Units

62.5

1

Notes

a.

Calculated continuous current based on maximum allowable junction temperature.

b.

Pulse width limited by maximum junction temperature

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

V

Parameter

Drain-Source Voltage

A

PRODUCT SUMMARY

650

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case

12

a

Gate-Source Voltage

Key Features:

• Low thermal impedance

• Fast switching speed

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

DRAIN

connected

to TAB

© Preliminary

1

Publication Order Number:

DS_AM12N65P_1A