MPS3904

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

40

70

100

60

30

—

—

300

—

—

—

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

—

—

0.2

0.3

Vdc

Base – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

0.65

—

0.85

1.1

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

200

—

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

4.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

8.0

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

1.0

10

k

Ω

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

0.5

8.0

X 10–4

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

100

400

—

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

1.0

40

µmhos

Noise Figure

(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

NF

—

5.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 3.0 Vdc, VBE(off) = – 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

td

—

35

ns

Rise Time

(VCC = 3.0 Vdc, VBE(off) = – 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

tr

—

50

ns

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc,

IB1 = IB2 = 1.0 mAdc)

ts

—

900

ns

Fall Time

(VCC = 3.0 Vdc, IC = 10 mAdc,

IB1 = IB2 = 1.0 mAdc)

tf

—

90

ns

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

EQUIVALENT SWITCHING TIME TEST CIRCUITS

*Total shunt capacitance of test jig and connectors

10 k

+ 3.0 V

275

CS < 4.0 pF*

10 k

+ 3.0 V

275

CS < 4.0 pF*

1N916

300 ns

DUTY CYCLE = 2%

+10.9 V

– 0.5 V

<1.0 ns

10 < t1 < 500 µs

DUTY CYCLE = 2%

+10.9 V

0

– 9.1 V

< 1.0 ns

t1