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AM7961P Datasheet(PDF) 1 Page - Analog Power |
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AM7961P Datasheet(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() Analog Power AM7961P Dual P-Channel 60-V (D-S) MOSFET VDS (V) ID (A) -6.2 -5.7 Symbol Limit Units VDS -60 VGS ±20 TA=25°C -6.2 TA=70°C -5 IDM -30 IS -4.6 A TA=25°C 2.5 TA=70°C 1.6 TJ, Tstg -55 to 150 °C Symbol Maximum Units 50 90 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY -60 rDS(on) (mΩ) 44 @ VGS = -10V 52 @ VGS = -4.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits DFN5X6-8L © Preliminary 1 Publication Order Number: DS_AM7961P_1A |
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