MPS404A

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IB, BASE CURRENT (mA)

Figure 9. Emitter–Collector “On” Resistance

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Capacitance

100

5.0

20

–100

IC, COLLECTOR CURRENT (mA)

Figure 11. Turn–On Time

–100

IC, COLLECTOR CURRENT (mA)

Figure 12. Turn–Off Time

–1.0

–2.0 –3.0

–5.0 –7.0 –10

2.0 k

20

–1.0

–2.0 –3.0

–5.0 –7.0 –10

–20

–30

–50 –70

1.0 k

100

–1.0

–2.0 –3.0

–5.0 –7.0 –10

–20 –30

–50 –70

70

50

30

20

10

7.0

–0.1

–0.2 –0.3

–0.5 –0.7

–1.0

–2.0

–5.0

–0.1

–0.2

–0.5

–0.05

–10

–20

–50

2.0

3.0

5.0

7.0

10

30

50

70

100

200

300

500

700

1.0 k

200

300

500

700

TJ = 25°C

NOTE: The dynamic resistance between the emitter and

Ie = 100 µA RMS

f = 1.0 kHz

TJ = 25°C

IE = 0

Cob

Cib

VCC = –10 V

IC/IB = 0

TJ = 25°C

tr

td @ VBE(off) = –1.4 V

ts

tf

VCC = –10 V

IC/IB = 0

IB1 = IB2

TJ = 25°C

Figure 13. Switching Time Test Circuit

RB

10 k

0.1

µF

Vin

51

TO SCOPE

1.0 k

VCC = –10 V

ton, td and tr

toff, ts and tf

Vin

(Volts)

VBB

(Volts)

–12

+1.4

+20.6

–11.6

Voltages and resistor values shown

are for IC = 10 mA. IC/IB = 10 and IB1

= IB2. Resistor values changed to ob-

tain curves in Figures 11 and 12.

VBB

RBB

1.0 k

Figure 14. Stored Base Charge Test Circuit

(0–250 pF)

RB*

(5.6 k

Ω)

INPUT Vin

C1

VCC

(–6.0 V)

RC (560 Ω)

OUTPUT

VOLTAGE WAVEFORMS

Vin

6.0 V

0

6.0 V

Vout

>5.0

µs

tr, tf < 15 ns

10%

toff

MEASUREMENT PROCEDURE

C1 is increased until the toff time of

the output waveform is decreased to

0.2

µs, QS is then calculated by

QS = C1 Vin.

QS3 or QS7 by B–Line Electronics

or equivalent may also be used.