2SD2374AP datasheet(1/3 Pages) PANASONIC

Part #	2SD2374AP

Description	Silicon NPN triple diffusion planar type

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

1

Publication date: March 2004

SJD00261BED

2SD2374A

Silicon NPN triple diffusion planar type

For power amplification

Complementary to 2SB1548A

■ Features

• High forward current transfer ratio h

FE which has satisfactory lin-

earity

• Low collector-emitter saturation voltage V

CE(sat)

• Full-pack package which can be installed to the heat sink with one

screw

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a = 25°C ± 3°C

1.4±0.2

1.6±0.2

0.8±0.1

0.55±0.15

2.54±0.30

5.08±0.50

12

3

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

9.9±0.3

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

80

V

Collector-emitter voltage (Base open)

VCEO

80

V

Emitter-base voltage (Collector open)

VEBO

6V

Collector current

IC

3A

Peak collector current

ICP

5A

Collector power

TC = 25°CPC

25

W

dissipation

2.0

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

P

hFE1

70 to 150

120 to 250

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = 30 mA, IB = 080

V

Base-emitter voltage

VBE

VCE = 4 V, IC = 3 A

1.8

V

Collector-emitter cutoff current (E-B short)

ICES

VCE

= 80 V, V

BE

= 0

200

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = 60 V, IB = 0

300

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = 6 V, IC = 01

mA

Forward current transfer ratio

hFE1 *

VCE

= 4 V, I

C

= 1 A

70

250



hFE2

VCE = 4 V, IC = 3 A

10

Collector-emitter saturation voltage

VCE(sat)

IC = 3 A, IB = 0.375 A

1.2

V

Transition frequency

fT

VCE

= 10 V, I

C

= 0.5 A, f = 10 MHz

30

MHz

Turn-on time

ton

IC

= 1 A, I

B1

= 0.1 A, I

B2

= − 0.1 A

0.5

µs

Storage time

tstg

VCC = 50 V

2.5

µs

Fall time

tf

0.4

µs

This product complies with the RoHS Directive (EU 2002/95/EC).

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