OP501 datasheet(2/5 Pages) OPTEK

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Issue A.4

02/09

Page 2 of 5

Silicon Phototransistor and Photo Darlington

in Miniature 0805 SMD Package

OP500, OP501, OP500DA, OP501DA

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Storage Temperature Range

-40o C to +100o C

Operating Temperature Range

-25o C to +85o C

Lead Soldering Temperature(1)

260° C

Collector-Emitter Voltage

OP500, OP501

OP500DA, OP501DA

30 V

35 V

Emitter-Collector Voltage

5 V

Power Dissipation(2)

OP500, OP501

OP500DA, OP501DA

75 mW

100 mW

Collector Current

OP500, OP501

OP500DA, OP501DA

20 mA

32 mA

Notes:

1. Solder time less than 5 seconds at temperature extreme.

2. Derate linearly at 2.17 mW/° C above 25° C.

3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less

than 10% over the entire lens surface of the phototransistor being tested.

4. To calculate typical collector dark current in µA, use the formulate ICEO = 10

(0.04 t - ¾), where TA is the ambient temperature in ° C.

Electrical Characteristics (TA = 25°C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

IC(ON)

On-State Collector Current

OP500, OP501

OP500DA, OP501DA

0.1

10.0

VCE = 5.0 V, EE = 0.15 mW/cm

2 (3)

VCE = 5.0 V, EE = 0.15 mW/cm

2 (3)

VCE(SAT)

Collector-Emitter Saturation Voltage

OP500, OP501

OP500DA, OP501DA

0.3

1.0

IC = 100 µA, EE = 1.0 mW/cm

2 (3)

IC = 1 mA, EE = 0.15 mW/cm

2 (3)

ICEO

Collector-Emitter Dark Current

100

VCC= 5.0 V

(4)

VBR(CEO)

Collector-Emitter Breakdown Voltage

OP500, OP501

OP500DA, OP501DA

IC= 100 µA, EE = 0

VBR(ECO)

Emitter-Collector Breakdown Voltage

OP500, OP501

OP500DA, OP501DA

IE= 100 µA, EE = 0

IC= 100 µA, EE = 0

tr, tf

Rise and Fall Times

OP500, OP501

OP500DA, OP501DA

µs

IC= 1 mA, RL = 1KΩ

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