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MBR1100 Datasheet(PDF) 2 Page - International Rectifier |
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MBR1100 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 5 page ![]() MBR1100 Bulletin PD-20587 rev. B 03/03 2 www.irf.com Part number MBR1100 V R Max. DC Reverse Voltage (V) V RWM Max. Working Peak Reverse Voltage (V) Voltage Ratings 100 V FM Max. Forward Voltage Drop 0.85 V @ 1A * See Fig. 1 (1) 0.96 V @ 2A 0.68 V @ 1A 0.78 V @ 2A I RM Max. Reverse Leakage Current 0.5 mA T J = 25 °C * See Fig. 2 (1) 1.0 mA T J = 125 °C CT Typical Junction Capacitance 35 pF V R = 5VDC, (test signal range 100Khz to 1Mhz) 25°C L S Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 10000 V/ µs (Rated VR) T J = 25 °C T J = 125 °C V R = rated V R Parameters Value Units Conditions Electrical Specifications (1) Pulse Width < 300µs, Duty Cycle <2% TJ Max. Junction Temperature Range(*) -40 to 150 °C Tstg Max. Storage Temperature Range -40 to 150 °C R thJL Max. Thermal Resistance Junction 80 °C/W DC operation (* See Fig. 4) to Lead (**) wt Approximate Weight 0.33(0.012) g (oz.) Case Style DO-204AL(DO-41) Thermal-Mechanical Specifications Parameters Value Units Conditions (**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package I F(AV) Max. Average Forward Current 10 A 50% duty cycle @ T C = 85°C, rectangular wave form * See Fig. 4 I FSM Max. Peak One Cycle Non-Repetitive 200 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6 50 10ms Sine or 6ms Rect. pulse EAS Non-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5 Amps, L = 8 mH I AR Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec Frequency limited by T J max. V A = 1.5 x V R typical Absolute Maximum Ratings Following any rated load condition and with rated VRRM applied A Parameters Value Units Conditions < thermal runaway condition for a diode on its own heatsink (*) dPtot 1 dTj Rth( j-a) |
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