STF18NM60N datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N

Electrical ratings

Doc ID 15868 Rev 4

3/21

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK,

TO-220,TO-247

TO-220FP

VDS

Drain-source voltage

600

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

13 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

8.2

8.2 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

52 (1)

PTOT

Total dissipation at TC = 25 °C

110

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

4.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

350

dv/dt(3)

ISD ≤ 13 A, di/dt ≤400 A/µs, VDD ≤80 % V(BR)DSS, VDS(peak) ≤V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

D²PAK

TO-220

TO-247 TO-220FP

Unit

Rthj-case Thermal resistance junction-case max

1.14

4.17

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max

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