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Data Sheet

EMB3 / UMB3N / IMB3A

lAbsolute maximum ratings

(Ta = 25°C)

<For Tr1 and Tr2 in common>

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

Junction temperature

Range of storage temperature

lElectrical characteristics

(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

DC current gain

Input resistance

-

Collector-emitter saturation voltage

Collector cut-off current

Emitter cut-off current

Emitter-base breakdown voltage

MHz

-

250

-

Transition frequency

f = 100MHz

-

3.29

4.7

6.11

kW

100

250

600

m

A

-

-

-

0.3

V

-

-

-

0.5

V

-

-

-

0.5

m

A

-

5

-

-

V

Collector-emitter breakdown voltage

V

-

50

-

-

50

-

-

-

Collector-base breakdown voltage

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

150

°C

-

55 to +150

°C

-

100

mA

EMB3 / UMB3N

mW

IMB3A

mW

-

50

V

-

5

V

Parameter

Symbol

Values

Unit

-

50

V

2/6

2012.06 - Rev.C