MCP1754_13 datasheet(6/44 Pages) MICROCHIP

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MCP1754/MCP1754S

DS22276B-page 6

 2011-2013 Microchip Technology Inc.

Line Regulation

VOUT/(VOUT-

VIN)

-0.05

±0.01

+0.05

%/V

VR + 1V VIN 16V

Load Regulation

VOUT/VOUT

-1.1

-0.4

%IL = 1.0 mA to 150 mA, Note 4

Dropout Voltage (Note 5)VDROPOUT

—

300

500

IL = 150 mA

Dropout Current

IDO

—50

µA

VIN = 0.95VR, IOUT = 0 mA

Undervoltage Lockout

UVLO

—

2.95

—

Rising VIN

Undervoltage Lockout Hyster-

esis

UVLOHYS

—

285

—

Falling VIN

Shutdown Input

Logic High Input

VSHDN-HIGH

2.4

—VIN(MAX)

Logic Low Input

VSHDN-LOW

0.0

—

0.8

Shutdown Input Leakage

Current

SHDNILK

—

0.100

0.500

2.0

µA

SHDN = GND

SHDN = 16V

Power Good Output

PWRGD Input Voltage Oper-

ating Range

VPWRGD_VIN

1.7

—VIN

VISINK = 1 mA

PWRGD Threshold Voltage

(Referenced to VOUT)

VPWRGD_TH

%VOUT

Falling Edge of VOUT

PWRGD Threshold

Hysteresis

VPWRGD_HYS

—2.0

—

%VOUT

Rising Edge of VOUT

PWRGD Output Voltage Low

VPWRGD_L

—0.2

0.6

VIPWRGD_SINK = 5.0 mA,

VOUT = 0V

PWRGD Output Sink

Current

IPWRGD_L

5.0

——

VPWRGD  0.4V

PWRGD Leakage Current

IPWRGD_LK

—40

700

VPWRGD Pullup = 10 K to VIN, VIN

= 16V

PWRGD Time Delay

TPG

—

100

—

µs

Rising Edge of VOUT,

RPULLUP = 10 k

Detect Threshold to PWRGD

Active Time Delay

TVDET_PWRGD

—

200

—

µs

Falling Edge of VOUT after

Transition from

VOUT = VPRWRGD_TH + 50 mV, to

VPWRGD_TH - 50 mV,

RPULLUP = 10k to VIN

AC Performance

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 1V, Note 1, ILOAD = 1 mA, COUT =

1µF (X7R), CIN = 1 µF (X7R), TA = 25°C, tr(VIN) = 0.5V/µs, SHDN = VIN, PWRGD = 10K to VOUT.

Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

The minimum VIN must meet two conditions: VIN3.6V and VIN VR + VDROPOUT(MAX).

VR is the nominal regulator output voltage when the input voltage VIN = VRated + VDROPOUT(MAX) or ViIN = 3.6V (which-

ever is greater); IOUT = 1 mA.

TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the

temperature range. VOUT-LOW = lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCVOUT.

Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output volt-

age value that was measured with an applied input voltage of VIN = VR + 1V or VIN = 3.6V (whichever is greater).

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power

dissipation causes the device operating junction temperature to exceed the maximum 150°C rating. Sustained junc-

tion temperatures above 150°C can impact the device reliability.

The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the

ambient temperature is not significant.

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