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MS20 Datasheet(PDF) 1 Page - AVX Corporation

Part # MS20
Description  MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
PDF  2 Pages
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Manufacturer  AVX [AVX Corporation]
Direct Link  http://www.avx.com
Logo AVX - AVX Corporation

MS20 Datasheet(HTML) 1 Page - AVX Corporation

  MS20 Datasheet HTML 1Page - AVX Corporation MS20 Datasheet HTML 2Page - AVX Corporation  
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MS
Series
Code
MS = MOS
MI = MIS
HOW TO ORDER
TYPICAL ELECTRICAL SPECIFICATIONS
20
Case Size
Square size
in mils
10, 20, 30, 40
OS = Special
order please
supply design
3
Working
Voltage
2 = 2 WVDC
4 = 4 WVDC
Z = 10 WVDC
3 = 25 WVDC
5 = 50 WVDC
S = Special
Order
M
Capacitance
Tolerance
F = ± 1%
J = ± 5%
K = ± 10%
M = ± 20%
W
Packaging
W = Antistatic
Waffle Pack
T = Tested Whole
Wafer
D = Tested Wafer
Diced on
Tape
3723
Termination Code
1st position top layer
2nd position top bonding layer
3rd position bottom bonding layer
4th position bottom layer
S
Dielectric Code
S = SiO2 for MOS
Style ONLY
N = SiON for MIS
Style ONLY
100
Capacitance
EIA Capacitance
Code in pF.
First two digits =
significant figures or
“R” for decimal place.
Third digit = number
of zeros or after “R”
significant figures.
MIS/MOS Single Layer Capacitors
Metal Insulator Semiconductor/Metal Oxide Semiconductor
For applications in RF, Microwave and GHz ranges, AVX
offers MIS/MOS Capacitors. These are Single Layer
Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to
produce small, high Q, temperature stable, high break down
voltage, low leakage capacitors. To ease assembly, AVX
offers a wide range of termination styles for epoxy or solder
die attach and subsequent Gold or Aluminum wire thermoson-
ic and ultrasonic bonding. Custom applications and designs
are welcome. Please contact your local representative.
BENEFITS
• MIS, SiON dielectric up to 100V applications
• MOS, SiO
2 dielectric up to 50V applications
• Sizes as small as 10 mils (254µm) squared
• DC to GHz operation
• High Q, low leakage
1 = AI
2 = Cr
3 = Au
4 = Ni
5 = Pd
6 = Ta
7 = TaN
8 = TiW
9 = TiWNi
OSOS = Special Order
Please Supply Design
Material
MIS (SiON)
MOS (SiO
2)
pF /mm2 Typical
150
85
TCC
± 60 ppm/ºC
± 30 ppm/ºC
Rated Voltage
≤100
≤ 50
Peak Voltage at +25ºC
1.5x Rated
1.5x Rated
DF
≤ 0.1%
≤ 0.1%
Voltage Stability
Independent
Independent
Frequency Range
≤ 40 GHz
≤ 40 GHz
TEST METHODS
Specification
Parameter
Method of Paragraph
MIL-STD-883
Bond Strength
2011.7
MIL-STD-883
Shear Strength
2019
MIL-STD-202
Life
108
MIS \ MOS Specific Capacitance vs Rated Voltage
0
20
40
60
80
100
120
140
20
30
40
50
60
70
80
90
100
110
Rated Voltage (V)
MOS
MIS
SPECIFIC CAPACITANCE (pF/mm
2) VERSUS RATED VOLTAGE


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