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MS20 Datasheet(PDF) 1 Page - AVX Corporation |
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MS20 Datasheet(HTML) 1 Page - AVX Corporation |
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1 / 2 page ![]() MS Series Code MS = MOS MI = MIS HOW TO ORDER TYPICAL ELECTRICAL SPECIFICATIONS 20 Case Size Square size in mils 10, 20, 30, 40 OS = Special order please supply design 3 Working Voltage 2 = 2 WVDC 4 = 4 WVDC Z = 10 WVDC 3 = 25 WVDC 5 = 50 WVDC S = Special Order M Capacitance Tolerance F = ± 1% J = ± 5% K = ± 10% M = ± 20% W Packaging W = Antistatic Waffle Pack T = Tested Whole Wafer D = Tested Wafer Diced on Tape 3723 Termination Code 1st position top layer 2nd position top bonding layer 3rd position bottom bonding layer 4th position bottom layer S Dielectric Code S = SiO2 for MOS Style ONLY N = SiON for MIS Style ONLY 100 Capacitance EIA Capacitance Code in pF. First two digits = significant figures or “R” for decimal place. Third digit = number of zeros or after “R” significant figures. MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to produce small, high Q, temperature stable, high break down voltage, low leakage capacitors. To ease assembly, AVX offers a wide range of termination styles for epoxy or solder die attach and subsequent Gold or Aluminum wire thermoson- ic and ultrasonic bonding. Custom applications and designs are welcome. Please contact your local representative. BENEFITS • MIS, SiON dielectric up to 100V applications • MOS, SiO 2 dielectric up to 50V applications • Sizes as small as 10 mils (254µm) squared • DC to GHz operation • High Q, low leakage 1 = AI 2 = Cr 3 = Au 4 = Ni 5 = Pd 6 = Ta 7 = TaN 8 = TiW 9 = TiWNi OSOS = Special Order Please Supply Design Material MIS (SiON) MOS (SiO 2) pF /mm2 Typical 150 85 TCC ± 60 ppm/ºC ± 30 ppm/ºC Rated Voltage ≤100 ≤ 50 Peak Voltage at +25ºC 1.5x Rated 1.5x Rated DF ≤ 0.1% ≤ 0.1% Voltage Stability Independent Independent Frequency Range ≤ 40 GHz ≤ 40 GHz TEST METHODS Specification Parameter Method of Paragraph MIL-STD-883 Bond Strength 2011.7 MIL-STD-883 Shear Strength 2019 MIL-STD-202 Life 108 MIS \ MOS Specific Capacitance vs Rated Voltage 0 20 40 60 80 100 120 140 20 30 40 50 60 70 80 90 100 110 Rated Voltage (V) MOS MIS SPECIFIC CAPACITANCE (pF/mm 2) VERSUS RATED VOLTAGE |
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