TSM9NB50 datasheet(2/7 Pages) TSC

2 / 7 page

TSM9NB50

500V N-Channel Power MOSFET

2/7

Version: A12

Electrical Specifications (Tc = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

500

Drain-Source On-State Resistance

VGS = 10V, ID = 4.5A

RDS(ON)

0.72

0.85

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.5

3.3

4.5

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Diode Forward Voltage

IS = 9A, VGS = 0V

VSD

0.9

1.5

Dynamic

Total Gate Charge

VDS = 400V, ID = 8A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

27.4

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

1019

Output Capacitance

Coss

129

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

VDD = 250V, ID = 9A,

RG = 25Ω

td(on)

27.4

Turn-On Rise Time

46.8

Turn-Off Delay Time

td(off)

13.3

Turn-Off Fall Time

5.7

Notes:

Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

VDD = 50V, IAS=2.5A, L=60mH, VDS=500V

Pulse test: pulse width ≤300uS, duty cycle ≤2%

Essentially Independent of Operating Temperature

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