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TSM60N03 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM60N03 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  TSM60N03 30V N-Channel Power MOSFET 1/4 Version: A12 TO-252 (DPAK) PRODUCT SUMMARY VDS (V) RDS(on)(m Ω) ID (A) 30 4.5 @ VGS =10V 60 Features ● Advanced Trench Technology ● Low RDS(ON) 4.5mΩ (Max.) ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Block Diagram N-Channel MOSFET Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID 60 A TC=70°C 48 TA=25°C 19 TA=70°C 15 Drain Current-Pulsed Note 1 IDM 140 A Avalanche Current, L=0.1mH IAS, IAR 38 A Avalanche Energy, L=0.1mH EAS, EAR 72 mJ Maximum Power Dissipation TC=25°C PD 41 W TC=70°C 26 TA=25°C 2.5 TA=70°C 1.6 Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C * Limited by maximum junction temperature Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 3 oC/W Thermal Resistance - Junction to Ambient RӨJA 50 oC/W Notes: Surface mounted on FR4 board t ≤ 10sec Pin Definition: 1. Gate 2. Drain 3. Source |
Similar Part No. - TSM60N03 |
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Similar Description - TSM60N03 |
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