MPSW01 MPSW01A

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 1000 mAdc, VCE = 1.0 Vdc)

hFE

55

60

50

—

—

—

—

Collector – Emitter Saturation Voltage

(IC = 1000 mAdc, IB = 100 mAdc)

VCE(sat)

—

0.5

Vdc

Base–Emitter On Voltage

(IC = 1000 mAdc, VCE = 1.0 Vdc)

VBE(on)

—

1.2

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)

fT

50

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

20

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

Figure 3. “ON” Voltages

Figure 4. Temperature Coefficient

50

500

10

IC, COLLECTOR CURRENT (mA)

300

200

70

50

30

IB, BASE CURRENT (mA)

1.0

0.8

0.6

0.4

0

IC, COLLECTOR CURRENT (mA)

1.0

0.8

0

IC, COLLECTOR CURRENT (mA)

1.0

–1.2

–1.6

–2.0

–2.4

–2.8

2.0

VCE = 1.0 V

TJ = 25°C

20

100

0.05

10

0.01 0.02

0.1 0.2

200

1000

100

20

50

100

0.2

0.2

0.6

0.4

–0.8

5.0 10

20

50

100 200

0.5

1.0 2.0

5.0

TJ = 25°C

500 1000

qVB FOR VBE

TJ = 25°C

1.0 2.0

5.0

10

20

50

100 200 500 1000

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

IC =

1000 mA

IC =

500 mA

IC =

10 mA

IC =

50 mA

IC =

100 mA

IC =

250 mA