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SS22T3 Datasheet(PDF) 2 Page - ON Semiconductor

Part # SS22T3
Description  Surface Mount Schottky Power Rectifier
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SS22T3 Datasheet(HTML) 2 Page - ON Semiconductor

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SS22, SS24
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SS22
SS24
VRRM
VRWM
VR
20
40
V
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
IO
2.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave,
100 kHz, TC = 105°C)
IFRM
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
75
A
Storage/Operating Case Temperature
Tstg, TC
−55 to +150
°C
Operating Junction Temperature (Note 1)
TJ
−55 to +150
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 3)
RqJL
RqJA
24
80
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 4)
see Figure 2
(iF = 2.0 A)
vF
TJ = 25°C
TJ = 125°C
V
0.50
0.46
Maximum Instantaneous Reverse Current (Note 4)
see Figure 4
(VR = 40 V)
IR
TJ = 25°C
TJ = 100°C
mA
0.4
5.7
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Pulse Test: Pulse Width
≤ 250 ms, Duty Cycle ≤ 2.0%.



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