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SS22T3 Datasheet(PDF) 2 Page - ON Semiconductor |
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SS22T3 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() SS22, SS24 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage SS22 SS24 VRRM VRWM VR 20 40 V Average Rectified Forward Current (At Rated VR, TL = 100°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) IFRM 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Storage/Operating Case Temperature Tstg, TC −55 to +150 °C Operating Junction Temperature (Note 1) TJ −55 to +150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 3) RqJL RqJA 24 80 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 4) see Figure 2 (iF = 2.0 A) vF TJ = 25°C TJ = 125°C V 0.50 0.46 Maximum Instantaneous Reverse Current (Note 4) see Figure 4 (VR = 40 V) IR TJ = 25°C TJ = 100°C mA 0.4 5.7 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. |
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