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STL57N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STL57N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 16 page ![]() STL57N65M5 Electrical characteristics Doc ID 022996 Rev 2 7/16 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized BVDSS vs temperature Figure 13. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss AM14710v1 Eoss 10 5 0 0 100 VDS(V) (µJ) 400 15 200 300 20 500 600 AM14711v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID = 250 µA VDS = VGS AM05459v1 RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 VGS= 10V ID= 17.5 A AM05460v1 VDS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 ID = 1mA 1.08 AM10399v1 E 0 0 20 RG( Ω) ( μJ) 10 30 100 200 40 ID=22.5A VDD=400V Eon Eoff 300 VGS=10V 400 500 600 700 AM15563v1 |
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