IXTP86N20T datasheet(1/6 Pages) IXYS

Part #	IXTP86N20T

Description	Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

PDF	6 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

200

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

200

V

GSM

± 30

V

I

D25

T

C

= 25

°C*

86

A

I

L

Lead Current Limit, RMS

75

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

260

A

I

AS

T

C

=

25

°C10

A

E

AS

T

C

=

25

°C

1.0

J

dv/dt

I

S ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS

3

V/ns

T

J

≤ 150°C, R

G = 3.3 Ω

P

D

T

C

= 25

°C

480

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting

Torque

(TO-220, TO-3P)

1.13 / 10 Nm/ lb.in.

F

C

Mounting

Force

(TO-263)

10...65/2..5..15

N/lb.

Weight

TO-263

2

g

TO-220

3

g

TO-3P

5.5

g

G = Gate

D = Drain

S = Source

TAB = Drain

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS

= 0 V, I

D = 250 μA

200

V

GS(th)

V

DS

= V

GS, ID = 1 mA

3.0

5.0

V

I

GSS

V

GS = ± 20 V, VDS = 0 V

± 200

nA

I

DSS

V

DS

= V

DSS

1

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25, Note 1

29

m

Ω

Trench Gate

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

V

DSS

= 200

V

I

D25

=86

A

R

DS(on)

≤≤≤≤≤

29

m

Ω

DS99664(08/06)

IXTA 86N20T

IXTP 86N20T

IXTQ 86N20T

TO-263 (IXTA)

G

S

(TAB)

TO-220 (IXTP)

D

(TAB)

G

S

TO-3P (IXTQ)

G

D

S

(TAB)

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IXTP86N20T Datasheet(PDF) 1 Page - IXYS Corporation

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