IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH110N25T

IXTV110N25TS

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

65

110

S

C

iss

9400

pF

C

oss

V

850

pF

C

rss

55

pF

t

d(on)

19

ns

t

r

27

ns

t

d(off)

60

ns

t

f

27

ns

Q

g(on)

157

nC

Q

gs

V

40

nC

Q

gd

50

nC

R

thJC

0.18

°C/W

R

thCS

0.25

°C/W

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. On through-hole package, R

5mm or less from the package body.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

110

A

I

SM

Repetitive, Pulse Width Limited by T

JM

350

A

V

SD

I

1.2

V

t

rr

170

ns

I

RM

27

A

Q

RM

2.3

μC

I

V

PLUS220SMD Outline

TO-247 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

e

∅ P

1

2

3

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals: 1 - Gate 2,4 - Drain

3 - Source