© 2008 IXYS All rights reserved

1 - 3

20080128a

MDD 200

IXYS reserves the right to change limits, test conditions and dimensions.

I

2x 350 A

I

FAVM

=

2x 224 A

V

High Power

Diode Modules

Features

• International standard package

• Direct copper bonded Al

with copper base plate

• Planar passivated chips

• Isolation voltage 3600 V~

Applications

• Supplies for DC power equipment

• DC supply for PWM inverter

• Field supply for DC motors

• Battery DC power supplies

Advantages

• Space and weight savings

• Simple mounting

• Improved temperature and power cycling

• Reduced protection circuits

Symbol

Conditions

Maximum Ratings

I

FRMS

I

FAVM

T

T

350

224

A

A

I

FSM

T

t = 10 ms

(50 Hz)

V

t = 8.3 ms (60 Hz)

10500

11200

A

A

T

t = 10 ms

(50 Hz)

V

t = 8.3 ms (60 Hz)

9100

9700

A

A

T

t = 10 ms

(50 Hz)

V

t = 8.3 ms (60 Hz)

551000

527000

T

t = 10 ms

(50 Hz)

V

t = 8.3 ms (60 Hz)

414000

395000

T

VJ

T

VJM

T

stg

-40...+150

150

-40...+125

°C

°C

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

I

t = 1 s

3000

3600

V~

V~

M

d

Mounting torque (M6)

Terminal connection torque (M6)

2.25 - 2.75

4.5 - 5.5

Nm

Nm

Weight

Typical including screws

120

g

3

1

2

V

RSM

V

RRM

Type

V

V

1500

1400

MDD 200-14N1

1700

1600

MDD 200-16N1

1900

1800

MDD 200-18N1

2300

2200

MDD 200-22N1

1

3

2

Symbol

Conditions

Characteristics Values

I

RRM

V

T

20

mA

V

F

I

T

1.3

V

V

T0

r

t

For power-loss calculations only

T

0.8

0.6

V

m

W

R

thJC

R

thJK

per diode; DC current

per module

per diode; DC current

per module

0.130

0.065

0.230

0.115

K/W

K/W

K/W

K/W

Q

S

I

RM

T

625

275

µC

A

d

S

d

A

a

Creeping distance on surface

Creepage distance in air

Maximum allowable acceleration

12.7

9.6

50

mm

mm

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

Dimensions in mm (1 mm = 0.0394“)

E72873