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LR024N Datasheet(PDF) 1 Page - International Rectifier |
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LR024N Datasheet(HTML) 1 Page - International Rectifier |
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1 / 13 page  HEXFET® Power MOSFET 01/18/11 www.irf.com 1 AUIRLR024N AUIRLU024N AUTOMOTIVE GRADE l Advanced Planar Technology l Low On-Resistance l Logic-Level Gate Drive l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on- resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Description Features D-Pak AUIRLR024N GD S Gate Drain Source I-Pak AUIRLU024N S D G D D S D G Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. V(BR)DSS 55V RDS(on) max. 0.065 Ω ID 17A HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.3 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 -55 to + 175 300 (1.6mm from case ) 45 0.3 ± 16 5.0 4.5 68 11 Max. 17 12 72 S D G PD- 96348 |
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