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STL10DN15F3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL10DN15F3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STL10DN15F3 Electrical characteristics Doc ID 023781 Rev 1 5/14 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 2.8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 11.2 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 2.8 A, VGS=0 -1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.8 A, di/dt = 100 A/µs, VDD=120 V, Tj=150 °C - 73.5 210 5.7 ns nC A |
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