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MBD4448W Datasheet(PDF) 1 Page - First Components International |
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MBD4448W Datasheet(HTML) 1 Page - First Components International |
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1 / 1 page ![]() 2. 30¡ À0. 05 1. 25¡ À0. 05 MBD4448W SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25 ℃) Collector current IO: 250 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) R IR= 10µA 75 V Reverse voltage leakage current IR VR=20V VR=75V 0.025 2.5 µA Forward voltage VF IF=5mA IF=10mA IF=100mA IF=150mA 0.72 0.855 1 1.25 V Diode capacitance CD VR=0V, f=1MHz 4 pF Reverse recovery time t r r IF=IR=10mA Irr=0.1×IR ,RL=100Ω 4 nS Test period <3000µs. Unit: mm SOT-323 Marking: KA3 Data Sheet 200mW Surface Mount Switching Diode |
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