MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS(Ta=25℃)

PARAMETERS

SYMBOL

V

UNITS

Repetitive Peak Off-State Voltage and

Repetitive Peak Reverse Voltage (1)

VDRM

&

VRRM

PA10SD

400

VOLT

RMS On-State Current at Ta=57℃ and Conduction

Angle of 180º

1.0

AMP

Peak Surge (Non-Repetitive)On-State Current,

8

AMP

Peak Gate-Trigger Current for 3µ sec , Max

1.0

AMP

Peak Gate-Power Dissipation at IGT≦IGTM

0.1

WATT

Average Gate-Power Dissipation

0.01

WATT

Peak gate reverse voltage

6

V

Peak Off-State Current, (1)Ta=25℃

VDRM & VRRM=Max. Rating Ta=125℃

10

200

µA

MAX

Maximum On-State Voltage. (Peak)

At Tc=25℃ and IT =Rated Amps

1.7

VOLT

MAX

DC Holding Current,(1)

10

mA

MAX

Critical Rate-Of-Rise of off-State Voltage.(1)

Gate Open,Ta=110℃

Critical

dv/dt

5

V/µ sec

DC Gate –Trigger Current for Anode Voltage=7VDC,

200

µA

MAX

DC Gate –Trigger Voltage for Anode Voltage=7VDC,

0.8

VOLT

MAX

Gate-Controlled Turn-on Time tD+tR IGT=10mA

Tgt

2.2

µ sec

Thermal Resistance , Junction-to-Ambient

RθJ-A

70

℃

/WATT

TYP

Storage Temperature range

Tstg

-40 to + 150

℃

Operating Temperature Range , Tj

Toper

-40 to + 110

℃

FEATURES

(1)RGK=1KΩ

■．

Driven directly with IC and MOS device.

■．

Feature proprietary, void-free glass passivated chips.

■．

Available in voltage ratings from 200 to 600 volts. (VDRM and VRRM)

■．

Sensitive gate trigger current.

■．

Designed for high volume, line-powered control application in relay lamp drivers, small

motor controls, gate drivers for large thyristors.

Dimmension in mm

SOT-89

Descriptions

Mechanical Dimensions