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STV160NF02LT4 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STV160NF02LT4
Description  N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET™II POWER MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STV160NF02LT4 Datasheet(HTML) 3 Page - STMicroelectronics

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STV160NF02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =10 V,ID =80A
RG =4.7Ω VGS =10V
(see test circuit, Figure 3)
28
ns
tr
Rise Time
800
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =16 V,ID =160 A,
VGS =10 V
115
15
45
160
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD =10 V,ID =80 A,
RG =4.7Ω, VGS =10 V
(see test circuit, Figure 5)
80
240
ns
ns
td(off)
tr(Voff)
tf
tc
Turn-off Delay Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 16 V, ID =40A
RG =4.7Ω, VGS = 10V
80
40
140
200
ns
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
160
A
ISDM (1)
Source-drain Current (pulsed)
640
A
VSD (2)
ForwardOnVoltage
ISD =160 A, VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =80A,di/dt =100A/µs,
VDD =15V, Tj =25°C
(see test circuit, Figure 5)
90
225
5
ns
nC
A
Safe Operating Area
Thermal Impedance
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