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ZHCS506TA Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZHCS506TA
Description  SURFACE MOUNT SCHOTTKY BARRIER DIODE
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZHCS506TA Datasheet(HTML) 2 Page - Diodes Incorporated

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ZHCS506
Document number: DS33217 Rev. 2 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
ZHCS506
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Continuous Reverse Voltage
VR
60
V
Continuous Forward Current
IF
500
mA
Forward Voltage @ IF = 500mA
VF
630
mV
Average Peak Forward Current; D.C. = 50%
IFAV
1000
mA
Non Repetitive Forward Current
t
≤ 100μs
IFSM
5.5
A
t
≤ 10ms
2.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation, TA = 25°C
PD
330
mW
Junction Temperature
TJ
125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V(BR)R
60
80
-
V
IR = 200μA
Forward Voltage (Note 2)
VF
-
275
310
mV
IF = 50mA
-
320
360
IF = 100mA
-
415
470
IF = 250mA
-
550
630
IF = 500mA
-
680
800
IF = 750mA
-
820
960
IF = 1A
-
1120
1350
IF = 1.5A
-
565
-
IF = 500mA, TA = 100°C
Reverse Current
IR
-
20
40
μA
VR = 45V
Diode Capacitance
CD
-
20
-
pF
f = 1MHz, VR = 25V
Reverse Recovery Time
trr
-
10
-
ns
Switched from IF = 500mA to
IR = 500mA
Measured @ IR = 50mA
Notes:
2.

Measured under pulsed conditions. Pulse width = 300
μS. Duty cycle
2%.



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