T830-8FP datasheet(5/9 Pages) STMICROELECTRONICS

5 / 9 page

T830-8FP

Characteristics

Doc ID 023366 Rev 1

5/9

Figure 11.

Relative variation of critical rate of

decrease of main current versus

junction temperature

Figure 12.

Relative variation of static dV/dt

immunity versus junction

temperature (typical values)

(dl / dt)c [T ] /

[T = 125 °C]

(dl / dt)c

100

125

T (°C)

Tj(°C)

dV/dt [T

j]/ dV/dt [T j=125 °C]

100

125

VD=VR=537V

(dV/dt) > 5KV/µs

Figure 13.

Relative variation of critical rate of

decrease of main current versus

reapplied dV/dt (typical values)

Figure 14.

Relative variation of leakage

current versus junction

temperature

0.0

0.5

1.0

1.5

1.0

10.0

100.0

(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c

Tj =125 °C

(dV/dt)c (V/µs)

/I[T ; V/ V

] / I

DRM RRM

DRM

RRM

DRM RRM [T

j = 125 °C; 800 V]

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

100

125

T (°C)

= V

= 800 V

DRM

RRM

= V

= 600 V

DRM

RRM

= V

= 400 V

DRM

RRM

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