SM30T18AY datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

SM30TY

4/13

Doc ID 022065 Rev 2

Figure 3.

Peak pulse power dissipation

versus initial junction temperature

(typical value)

Figure 4.

Peak pulse power versus

exponential pulse duration

(Tj initial = 25 °C)

P (W)

500

1000

1500

2000

2500

3000

3500

100

125

150

175

T (°C)

10/1000 µs

P (kW)

0.1

1.0

10.0

100.0

1000.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

T initial = 25 °C

)

P ms

Figure 5.

Clamping voltage versus peak

pulse current (exponential

waveform, maximum values)

Figure 6.

Junction capacitance versus

reverse applied voltage for

unidirectional types (typical values)

I (A)

0.1

1.0

10.0

100.0

1000.0

100

10/1000 µs

8/20 µs

V (V)

T initial = 25 °C

C(nF)

0.1

1.0

10.0

100

SM30T18AY

SM30T39AY

F = 1 MHz

= 30 mV

T = 25 °C

OSC

RMS

V (V)

Figure 7.

Junction capacitance versus

reverse applied voltage for

bidirectional types (typical values)

Figure 8.

Leakage current versus junction

temperature (typical values)

0.1

1.0

10.0

100

C(nF)

SM30T18CAY

SM30T39CAY

F = 1 MHz

= 30 mV

T = 25 °C

OSC

RMS

V (V)

1.E+00

1.E+01

1.E+02

1.E+03

100

125

150

V= V

RRM

I (nA)

T (°C)

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