TIP30C datasheet(1/4 Pages) ETC2

Part #	TIP30C

Description	High Power Bipolar Transistors

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Manufacturer	ETC2 [List of Unclassifed Manufacturers]

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High Power Bipolar Transistors

Tip Series

Page <1>

16/06/12 V1.1

www.element14.com

www.farnell.com

www.newark.com

Dimensions : Millimetres

Features:

• Collector-Emitter sustaining voltage-

VCEO (sus)

= 60 V (Minimum) - TIP29A, TIP30A

= 100 V (Minimum) - TIP29C, TIP30C

• Collector-Emitter saturation voltage-

VCE (sat)

= 0.7 V (Maximum) at IC = 1 A

• Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA

1 A

Complementary Silicon

Power Transistors

40 - 100 V

30 W

TO-220

Pin 1. Base

2. Collector

3. Emitter

4. Collector (Case)

Dimensions

Minimum

Maximum

A

14.68

15.31

B

9.78

10.42

C

5.01

6.52

D

13.06

14.62

E

3.57

4.07

F

2.42

3.66

G

1.12

1.36

H

0.72

0.96

I

4.22

4.98

J

1.14

1.38

K

2.2

2.97

L

0.33

0.55

M

2.48

2.98

O

3.7

3.9

Maximum Ratings

Characteristic

Symbol

TIP29A

TIP30A

TIP29C

TIP30C

Unit

Collector-Emitter Voltage

VCEO

60

100

V

Collector-Base Voltage

VCBO

Emitter-Base Voltage

VEBO

5

Collector Current-Continuous

- Peak

IC

1

3

A

Base Current

IB

0.4

Total Power Dissipation at TC = 25°C

Derate above 25°C

PD

30

0.24

W

W / °C

Operating and Storage Junction Temperature Range

TJ, TSTG

-65 to +150

°C

NPN

PNP

TIP29A TIP30A

TIP29C TIP30C

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