FMMT591A datasheet(1/4 Pages) DIODES

Part #	FMMT591A

Description	SOT23 PNP silicon planar medium power transistor

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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Issue 4 - August 2008

1

www.zetex.com

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A Product Line of

Diodes Incorporated

FMMT591A

SOT23 PNP silicon planar medium power transistor

Features

Low equivalent on resistance RCE(sat) = 350m at 1A

Part Marking Detail -91A

Complementary type -FMMT491A

Absolute maximum ratings.

Electrical characteristics (at Tamb = 25°C)

Parameter

Symbol

Value

Unit

Collector-Base voltage

VCBO

-40

V

Collector-Emitter voltage

VCEO

-40

V

Emitter-Base voltage

VEBO

-5

V

Peak pulse current

ICM

-2

A

Continuous Collector current

IC

-1

A

Base current

IB

-200

mA

Power dissipation at Tamb=25oC

Ptot

500

mW

Operating an storage temperature range

Tj ; TSTG

-55 to +150

°C

Parameter

Symbol

Min

Max

Unit

Conditions

Collector-Base breakdown voltage

V(BR)CBO

-40

V

IC=-100 A

Collector-Emitter breakdown voltage

V(BR)CEO

-40

V

IC=-10mA (*)

NOTES:

(*) Measured under pulse conditions. Pulse width=300 s. Duty cycle 2%

Emitter-Base breakdown voltage

V(BR)EBO

-5

V

IE=-100 A

Collector cut-off current

ICBO

-100

nA

VCB=-30V

Emitter cut-off current

IEBO

-100

nA

VEB=-4V

Collector-Emitter cut-off current

ICES

-100

nA

VCES=-30V

Collector-Emitter saturation voltage

VCE(sat)

-0.2

V

IC=-100mA, IB=-1mA(*)

-0.35

V

IC=-500mA, IB=-20mA(*)

-0.5

V

IC=-1A, IB=-100mA(*)

Base-Emitter saturation voltage

VBE(sat)

-1.1

V

IC=-1A, IB=-50mA(*)

Base-Emitter turn-on voltage

VBE(on)

-1.0

V

IC=-1A, VCE=-5V(*)

Static forward current transfer ratio

hFE

300

IC=-1mA,

300

800

IC=-100mA(*)

250

IC=-500mA(*), VCE=-5V

160

IC=-1A(*)

30

IC=-2A(*)

Transition frequency

fT

150

MHz

IC=-50mA, VCE=-10V

f=100MHz

Output capacitance

Cobo

10

pF

VCB=-10V, f=1MHz

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