IRFS4115TRLPBF datasheet(2/9 Pages) IRF

2 / 9 page

IRFS/SL4115PbF

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Recommended max EAS limit, starting TJ = 25°C,

L = 0.17mH, RG = 25Ω, IAS = 100A, VGS =15V.

ISD ≤ 62A, di/dt ≤ 1040A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

RθJC value shown is at time zero.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

150

–––

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

–––

0.18

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

10.3

12.1

VGS(th)

Gate Threshold Voltage

3.0

–––

5.0

IDSS

Drain-to-Source Leakage Current

–––

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

2.3

–––

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

–––

Total Gate Charge

–––

120

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

5270

–––

Coss

Output Capacitance

–––

490

–––

Crss

Reverse Transfer Capacitance

–––

105

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) –––

460

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)

–––

530

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

396

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 130V,

–––

110

–––

TJ = 125°C

IF = 62A

Qrr

Reverse Recovery Charge

–––

300

–––

nC TJ = 25°C

di/dt = 100A/μs

–––

450

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

6.5

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 50V, ID = 62A

ID = 62A

VGS = 20V

VGS = -20V

MOSFET symbol

showing the

VDS = 75V

Conditions

VGS = 10V g

VGS = 0V

VDS = 50V

ƒ = 1.0 MHz, See Fig. 5

VGS = 0V, VDS = 0V to 120V i, See Fig. 11

VGS = 0V, VDS = 0V to 120V h

TJ = 25°C, IS = 62A, VGS = 0V g

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 3.5mAd

VGS = 10V, ID = 62A g

VDS = VGS, ID = 250μA

VDS = 150V, VGS = 0V

VDS = 150V, VGS = 0V, TJ = 125°C

ID = 62A

RG = 2.2Ω

VGS = 10V g

VDD = 98V

ID = 62A, VDS =0V, VGS = 10V

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