PDTC143X_SER

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 11 — 9 December 2011

7 of 17

NXP Semiconductors

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 k

, R2 = 10 k

7.

Characteristics

[1]

Characteristics of built-in transistor

Table 8.

Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

collector-base cut-off

current

-

-

100

nA

collector-emitter

cut-off current

-

-

1

A

--

5

A

emitter-base cut-off

current

-

-

600

A

DC current gain

50

-

-

collector-emitter

saturation voltage

-

-

100

mV

off-state input voltage

0.9

0.3

V

on-state input voltage

2.5

1.5

-

V

R1

bias resistor 1 (input)

3.3

4.7

6.1

k



R2/R1

bias resistor ratio

1.7

2.1

2.6

collector capacitance

f= 1MHz

--

2.5

pF

transition frequency

f = 100 MHz

[1]

-230

-MHz