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VO615A Datasheet(PDF) 3 Page - Vishay Siliconix

Part # VO615A
Description  Optocoupler, Phototransistor Output, High Temperature
PDF  9 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VO615A Datasheet(HTML) 3 Page - Vishay Siliconix

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VO615A
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 15-Feb-13
3
Document Number: 81753
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• According to DIN EN 60747-5-5 (VDE 0884), § 7.4.3.8.2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the
safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 2 - Derating Diagram
Fig. 3 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
VCE = 5 V, IF = 1 mA
VO615A-1
CTR
13
30
%
VO615A-2
CTR
22
45
%
VO615A-3
CTR
34
70
%
VO615A-4
CTR
56
90
%
VCE = 5 V, IF = 5 mA
VO615A
CTR
50
600
%
VO615A-5
CTR
50
150
%
VO615A-6
CTR
100
300
%
VO615A-7
CTR
80
160
%
VO615A-8
CTR
130
260
%
VO615A-9
CTR
200
400
%
VCE = 5 V, IF = 10 mA
VO615A-1
CTR
40
80
%
VO615A-2
CTR
63
125
%
VO615A-3
CTR
100
200
%
VO615A-4
CTR
160
320
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Vpd
1.36
kV
Insulation resistance
VIO = 500 V
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Rated impulse voltage
VIOTM
6000
Vpeak
Max. working voltages
Recurring peak voltage
VIORM
850
Vpeak
Forward current
ISI
130
mA
Power dissipation
PSO
265
mW
Safety temperature
Tsi
150
°C
Creepage distance
7.6
mm
0
25
50
75
125
0
50
100
150
200
300
TSI - Safety Temperature (°C)
150
100
250
Phototransistor
PSO (mW)
IR-diode
ISI (mA)
t
13930
t1, t2 = 1 s to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
Vpd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s
tstres
t3
t4
t2



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