BCV27 datasheet(1/1 Pages) DIODES

Part #	BCV27

Description	SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

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Manufacturer	DIODES [Diodes Incorporated]

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SOT23 NPN SILICON PLANAR

DARLINGTON TRANSISTORS

ISSUE 3 SEPTEMBER 1995

7

FEATURES

*High VCEO

* Low saturation voltage

COMPLEMENTARY TYPES BCV27 BCV28

BCV47 BCV48

PARTMARKING DETAILS

BCV27 ZFF

BCV47 ZFG

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BCV27

BCV47

UNIT

Collector-Base Voltage

VCBO

40

80

V

Collector-Emitter Voltage

VCEO

30

60

V

Emitter-Base Voltage

VEBO

10

V

Peak Pulse Current

ICM

800

mA

Continuous Collector Current

IC

500

mA

Base Current

IB

100

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

BCV27

BCV47

UNIT CONDITIONS.

MIN.

MAX. MIN.

MAX.

Collector-Base

Breakdown Voltage

V(BR)CBO

40

80

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

30

60

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

10

V

IE=10µA

Collector Cut-Off

Current

ICBO

100

10

100

10

nA

µ

A

µ

A

VCB= 30V

VCB= 60V

VCB=30V,Tamb=150oC

VCB=60V,Tamb=150oC

Emitter Base

Cut-Off Current

IEBO

100

nA

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

1.0

V

IC=100mA,IB=0.1mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.5

V

IC=100mA,IB=0.1mA*

Static Forward Current

Transfer Ratio

hFE

4K

10K

20K

4K

2K

4K

10K

2K

IC=100µA, VCE=1V

IC=10mA, VCE=5V*

IC=100mA, VCE=5V*

IC=500mA, VCE=5V*

Transition Frequency

fT

170 Typical

MHz

IC=50mA, VCE=5V

f = 20MHz

Output Capacitance

Cobo

3.5 Typical

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Periodic Sample Test Only.

For typical graphs see FMMT38A datasheet

BCV27

BCV47

C

B

E

SOT23

3 - 22

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