BCV49 datasheet(1/1 Pages) DIODES

Part #	BCV49

Description	SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

1 / 1 page

SOT89 NPN SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 3 – SEPTEMBER 1995

COMPLEMENTARY TYPE –

BCV48

PARTMARKING DETAILS –

EG

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

10

V

Peak Pulse Current

ICM

800

mA

Continuous Collector Current

IC

500

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature

Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

80

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

60

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

10

V

IE=10µA

Collector Cut-Off

Current

ICBO

100

10

nA

µA

VCB=60V

VCB=60V, Tamb=150°C

Emitter Cut-Off Current IEBO

100

nA

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

1V

IC=100mA, IB=0.1mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.5

V

IC=100mA, IB=0.1mA*

Static Forward Current

Transfer Ratio

hFE

2000

4000

10000

2000

IC=100µA, VCE=1V†

IC=10mA, VCE=5V*

IC=100mA, VCE=5V*

IC=500mA, VCE=5V*

Transition Frequency

fT

170

MHz

IC=50mA, VCE=5V

f = 20MHz

Output Capacitance

Cobo

3.5

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical graphs see FMMT38A datasheet

† Periodic Sample Test Only.

Spice parameter data is available upon request for this device

BCV49

C

B

E

SOT89

3 - 26

Similar Part No. - BCV49

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BCV49	43Kb / 8P	NPN Darlington transistors 1999 Apr 08
Zetex Semiconductors	BCV49	16Kb / 1P	NPN SILICON PLANAR DARLINGTON TRANSISTOR
Siemens Semiconductor G...	BCV49	141Kb / 4P	NPN Silicon Darlington Transistors (For general AF applications High collector current)
Infineon Technologies A...	BCV49	47Kb / 5P	NPN Silicon Darlington Transistors Jul-12-2001
NXP Semiconductors	BCV49	124Kb / 8P	NPN Darlington transistors 2004 Dec 06

More results

Similar Description - BCV49

Manufacturer	Part #	Datasheet	Description
Zetex Semiconductors	BST40	15Kb / 1P	SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
	BST51	15Kb / 1P	SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR
	BST61	16Kb / 1P	SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR
Diodes Incorporated	FCX458	29Kb / 1P	SOT89 NPN SILICON PLANAR OCTOBER 1995
	FCX493	312Kb / 5P	SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR OCTOBER 2005
	FCX491TA	27Kb / 1P	SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR OCTOBER 1995
	BCV49	26Kb / 1P	SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR SEPTEMBER 1995
	BST52	225Kb / 6P	80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89 Rev 4
	SXTA42	31Kb / 1P	SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR JANUARY 1996
	BST52	225Kb / 6P	80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89 December 2011 Rev. 4 - 2

More results

BCV49 Datasheet(PDF) 1 Page - Diodes Incorporated

BCV49 Datasheet(HTML) 1 Page - Diodes Incorporated

Similar Part No. - BCV49

Similar Description - BCV49

Html Pages

1

Datasheet Download

Link URL