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BCW61 Datasheet(PDF) 2 Page - Diodes Incorporated |
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BCW61 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 2 page  SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCW61A BA BCW61AR CA BCW61B BB BCW61BR CB BCW61C BC BCW61CR CC BCW61D BD BCW61DR CD COMPLEMENTARY TYPE BCW60 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -200 mA Base Current IB -50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFEGroup A hFEGroup B hFEGroupC hFEGroup D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ h12e 1.5 2 2 3 10-4 h21e 200 260 330 520 h22e 18 30 24 50 30 60 50 100 µ S S W ITCHING CIRCUIT BCW61 PAGE NO ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO -32 V ICEO=-2mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO=-1µA Collector-Emitter Cut-off Current ICES -20 -20 nA µ A VCES=-32V VCES=-32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO -20 nA VEBO=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA Base-Emitter Saturation Voltage VBE(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Base - Emitter Voltage VBE -0.6 -0.55 -0.65 -0.72 -0.75 V V V IC=-10µA, VCE=-5V IC=-2mA, VCE=-5V IC=-50mA, VCE=-1V Static BCW61A Forward Current Transfer BCW61B Ratio BCW61C BCW61D hFE 120 60 140 170 220 IC=-10µA, VCE=-5V IC=-2mA, VCE=-5V IC=-50mA, VCE=-1V 30 180 80 200 250 310 IC=-10µA, VCE=-5V IC=-2mA, VCE=-5V IC=-50mA, VCE=-1V 40 250 100 270 350 460 IC=-10µA, VCE=-5V IC=-2mA, VCE=-5V IC=-50mA, VCE=-1V 100 380 110 340 500 630 IC=-10µA, VCE=-5V IC=-2mA, VCE=-5V IC=-50mA, VCE=-1V Transition Frequency fT 180 MHz IC =10mA, VCE= -5V f = 100MHz Emitter-Base Capacitance Cebo 11 pF VEBO= -0.5V,f =1MHz Collector-Base Capacitance Ccbo 6pF VCBO= -10V, f =1MHz Noise Figure N 2 6 dB IC =- 0.2mA, VCE=- 5V RG=2KΩ, f=1KHz ∆ f=200Hz Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 35 50 85 400 80 480 150 800 ns ns ns ns ns ns -IC: -IB1: IB2 =10:1:1mA R1=R2=5KΩ VBB=-3.6V, RL=990Ω *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device C B E BCW61 R1 R2 RL 50Ω VCC(-10V) +VBB -10V tr < 5nsec Zin ≥ 100kΩ Oscilloscope 1µsec Mark/Space ratio < 0.01 Zs=50Ω BAY 63 tr < 5nsec |
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