MRF20060 MRF20060S

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, IB = 0)

V(BR)CEO

25

26

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

V(BR)CES

60

69

—

Vdc

Collector–Base Breakdown Voltage

(IC = 50 mAdc, IE = 0)

V(BR)CBO

60

69

—

Vdc

Reverse Base–Emitter Breakdown Voltage

(IB = 10 mAdc, IC = 0)

V(BR)EBO

3

3.5

—

Vdc

Zero Base Voltage Collector Leakage Current

(VCE = 30 Vdc, VBE = 0)

ICES

—

—

10

mAdc

ON CHARACTERISTICS

DC Current Gain

(VCE = 5 Vdc, IC = 1 Adc)

hFE

20

40

80

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)

Cob

—

55

—

pF

Common–Emitter Amplifier Power Gain

(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Gpe

9

9.4

—

dB

Collector Efficiency

(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

η

33

35

—

%

Intermodulation Distortion

(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IMD

—

–33

–30

dB

Input Return Loss

(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IRL

12

19

—

dB

Output Mismatch Stress

(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase

Angles at Frequency of Test)

ψ

No Degradation in Output Power

(1) For Information Only. This Part Is Collector Matched.