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ADM3311EARS Datasheet(PDF) 15 Page - Analog Devices |
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ADM3311EARS Datasheet(HTML) 15 Page - Analog Devices |
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15 / 24 page ![]() Data Sheet ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E Rev. I | Page 15 of 24 Transmitter (Driver) Section The drivers convert 3.3 V logic input levels into EIA-232 output levels. With VCC = 3.0 V and driving an EIA-232 load, the output voltage swing is typically ±6.4 V (or ±5.5 V for ADM3310E and ADM3315E). Unused inputs may be left unconnected, because an internal 400 kV pull-up resistor pulls them high forcing the outputs into a low state. The input pull-up resistors typically source 8 mA when grounded, so unused inputs should either be connected to VCC or left unconnected in order to minimize power consumption. Receiver Section The receivers are inverting level shifters that accept RS-232 input levels and translate them into 3.3 V logic output levels. The inputs have internal 5 kΩ pull-down resistors (22 kΩ for the ADM3310E) to ground and are also protected against overvoltages of up to ±30 V. Unconnected inputs are pulled to 0 V by the internal 5 kΩ (or 22 kΩ for the ADM3315E) pull- down resistor. This, therefore, results in a Logic 1 output level for unconnected inputs or for inputs connected to GND. The receivers have Schmitt trigger inputs with a hysteresis level of 0.14 V. This ensures error-free reception for both noisy inputs and for inputs with slow transition times. ENABLE AND SHUTDOWN The enable function is intended to facilitate data bus connections where it is desirable to three-state the receiver outputs. In the disabled mode, all receiver outputs are placed in a high impedance state. The shutdown function is intended to shut the device down, thereby minimizing the quiescent current. In shutdown, all transmitters are disabled. All receivers are shut down, except for Receiver R3 (ADM3307E, ADM3312E, and ADM3315E), Receiver R5 (ADM3311E), and Receiver R4 and Receiver R5 (ADM3310E). Note that disabled transmitters are not three-stated in shutdown, so it is not permitted to connect multiple (RS-232) driver outputs together. The shutdown feature is very useful in battery-operated systems because it reduces the power consumption to 66 nW. During shutdown, the charge pump is also disabled. When exiting shutdown, the charge pump is restarted and it takes approximately 100 μs for it to reach its steady-state operating conditions. 0V 3V EN INPUT tDR VOH –0.1V VOL +0.1V VOH VOL RECEIVER OUTPUT Figure 28. Receiver Disable Timing 3V 0.4V 0V 3V tER EN INPUT VOH VOL RECEIVER OUTPUT Figure 29. Receiver Enable Timing High Baud Rate The ADM33xxE features high slew rates, permitting data transmission at rates well in excess of the EIA/RS-232E specifications. RS-232 voltage levels are maintained at data rates up to 230 kbps (460 kbps for ADM3307E) under worst-case loading conditions. This allows for high speed data links between two terminals. LAYOUT AND SUPPLY DECOUPLING Because of the high frequencies at which the ADM33xxE oscillator operates, particular care should be taken with printed circuit board layout, with all traces being as short as possible and C1 to C3 being connected as close to the device as possible. The use of a ground plane under and around the device is also highly recommended. When the oscillator starts up during Green Idle operation, large current pulses are taken from VCC. For this reason, VCC should be decoupled with a parallel combination of 10 μF tantalum and 0.1 μF ceramic capacitors, mounted as close to the VCC pin as possible. Capacitor C1 to Capacitor C3 can have values between 0.1 μF and 1 μF. Larger values give lower ripple. These capacitors can be either electrolytic capacitors chosen for low equivalent series resistance (ESR) or nonpolarized types, but the use of ceramic types is highly recommended. If polarized electrolytic capacitors are used, polarity must be observed (as shown by C1+). ESD/EFT TRANSIENT PROTECTION SCHEME The ADM33xxE uses protective clamping structures on all inputs and outputs that clamp the voltage to a safe level and dissipate the energy present in ESD (electrostatic) and EFT (electrical fast transients) discharges. A simplified schematic of the protection structure is shown in Figure 30 and Figure 31 (see Figure 32 and Figure 33 for ADM3307E protection structure). Each input and output contains two back-to-back high speed clamping diodes. During normal operation with maximum RS-232 signal levels, the diodes have no effect as one or the other is reverse biased depending on the polarity of the signal. If, however, the voltage exceeds about ±50 V, reverse breakdown occurs and the voltage is clamped at this level. The diodes are large p-n junctions designed to handle the instantaneous current surge that can exceed several amperes. |
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