BAS28

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 22 July 2010

3 of 12

NXP Semiconductors

BAS28

High-speed double diode

5.

Limiting values

[1]

Device mounted on an FR4 PCB.

[2]

One diode loaded.

[3]

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

repetitive peak

reverse voltage

-85

V

reverse voltage

-

75

V

forward current

[1] -215

mA

repetitive peak

forward current

-500

mA

non-repetitive peak

forward current

square wave

[3]

4

A

-

1

A

-

0.5

A

Per device

total power dissipation

[1][2] -250

mW

junction temperature

-

150

°C

storage temperature

−65

+150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; one diode loaded

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

thermal resistance from

junction to tie-point

-

-

360

K/W