BAT85 datasheet(3/8 Pages) NXP

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NXP Semiconductors

BAT85

Schottky barrier single diode

BAT85

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Product data sheet

24 July 2012

3 / 8

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 0.1 mA; Tamb = 25 °C

240

IF = 1 mA; Tamb = 25 °C

320

IF = 10 mA; Tamb = 25 °C

400

IF = 30 mA; Tamb = 25 °C

500

forward voltage

IF = 100 mA; Tamb = 25 °C

800

reverse current

VR = 25 V; Tamb = 25 °C

µA

diode capacitance

f = 1 MHz; Tamb = 25 °C; VR = 1 V

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

1.2

0.8

0.4

VF (V)

(mA)

103

102

10- 1

mld358

(1) (2) (3)

(1)

(2) (3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

mgc682

105

(nA)

104

103

102

10- 1

VR (V)

(1)

(2)

(3)

(1) Tamb = 85 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

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